产品技术规范
欧盟RoHS指令
Compliant with Exemption
美国出口管制分类ECCN编码
EAR99
环保无铅
Active
美国海关商品代码
COMPONENTS
SVHC
Yes
SVHC超标
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±16
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
55
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
18@10V
Typical Gate Charge @ Vgs (nC)
27@4.5V
Typical Gate to Drain Charge (nC)
10@4.5V
Typical Gate to Source Charge (nC)
7
Typical Reverse Recovery Charge (nC)
200
Typical Input Capacitance @ Vds (pF)
1700@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
105@25V
Minimum Gate Threshold Voltage (V)
1
Typical Output Capacitance (pF)
300
Maximum Power Dissipation (mW)
95000
Typical Fall Time (ns)
20
Typical Rise Time (ns)
100
Typical Turn-Off Delay Time (ns)
40
Typical Turn-On Delay Time (ns)
20
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Supplier Temperature Grade
Industrial
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
14@10V|16@5V
Maximum Pulsed Drain Current @ TC=25°C (A)
220
Typical Gate Plateau Voltage (V)
3
Typical Reverse Recovery Time (ns)
80
Maximum Diode Forward Voltage (V)
1.6
Typical Gate Threshold Voltage (V)
1.7
Maximum Positive Gate-Source Voltage (V)
16
Mounting
Through Hole
Package Height
9.1
Package Width
4.5
Package Length
10.2
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220AB
Pin Count
3
Lead Shape
Through Hole