MOSFETs
STP36NF06L
Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-220AB Tube Automotive AEC-Q101
STMicroelectronics产品技术规范
欧盟RoHS指令
Compliant with Exemption
美国出口管制分类ECCN编码
EAR99
环保无铅
Active
美国海关商品代码
8541.29.00.55
SVHC
Yes
SVHC超标
Yes
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±18
Maximum Gate Threshold Voltage (V)
2.5
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
30
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
40@10V
Typical Gate Charge @ Vgs (nC)
13@5V
Typical Gate to Drain Charge (nC)
7.8
Typical Gate to Source Charge (nC)
4.2
Typical Reverse Recovery Charge (nC)
107
Typical Input Capacitance @ Vds (pF)
660@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
70@25V
Minimum Gate Threshold Voltage (V)
1
Typical Output Capacitance (pF)
170
Maximum Power Dissipation (mW)
70000
Typical Fall Time (ns)
13
Typical Rise Time (ns)
80
Typical Turn-Off Delay Time (ns)
19
Typical Turn-On Delay Time (ns)
10
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Supplier Temperature Grade
Automotive
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
32@10V|45@5V
Maximum Pulsed Drain Current @ TC=25°C (A)
120
Typical Gate Plateau Voltage (V)
4.2
Typical Reverse Recovery Time (ns)
55
Maximum Diode Forward Voltage (V)
1.5
Maximum Positive Gate-Source Voltage (V)
18
Mounting
Through Hole
Package Height
9.15(Max)
Package Width
4.6(Max)
Package Length
10.4(Max)
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220AB
Pin Count
3
Lead Shape
Through Hole