MOSFET

STL57N65M5

Trans MOSFET N-CH Si 650V 22.5A 4-Pin Power Flat EP T/R

STMicroelectronics

产品技术规范

• 유럽 연합 RoHS 명령어

  Compliant with Exemption

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active

• 미국 세관 상품 코드

  8541.29.00.55

• SVHC

  Yes

• SVHC 기준 초과

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single Triple Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  650

• Maximum Gate-Source Voltage (V)

  ±25

• Maximum Gate Threshold Voltage (V)

  5

• Maximum Continuous Drain Current (A)

  22.5

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  69@10V

• Typical Gate Charge @ Vgs (nC)

  110@10V

• Typical Gate Charge @ 10V (nC)

  110

• Typical Input Capacitance @ Vds (pF)

  4200@100V

• Maximum Power Dissipation (mW)

  2800

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.88

• Package Width

  8

• Package Length

  8

• PCB changed

  4

• Supplier Package

  Power Flat EP

• Pin Count

  4

• Lead Shape

  No Lead