MOSFETs

STH275N8F7-6AG

Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) H2PAK T/R Automotive AEC-Q101

STMicroelectronics

产品技术规范

• 欧盟RoHS指令

  Compliant with Exemption

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8541.29.00.55

• SVHC

  Yes

• SVHC超标

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single Hex Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  80

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  4.5

• Maximum Continuous Drain Current (A)

  180

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  2.1@10V

• Typical Gate Charge @ Vgs (nC)

  193@10V

• Typical Gate Charge @ 10V (nC)

  193

• Typical Input Capacitance @ Vds (pF)

  13600@50V

• Maximum Power Dissipation (mW)

  315000

• Typical Fall Time (ns)

  42

• Typical Rise Time (ns)

  180

• Typical Turn-Off Delay Time (ns)

  98

• Typical Turn-On Delay Time (ns)

  56

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  4.8(Max)

• Package Width

  8.9(Max)

• Package Length

  10.4(Max)

• PCB changed

  6

• Tab

  Tab

• Supplier Package

  H2PAK

• Pin Count

  7

• Lead Shape

  Gull-wing