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SIR124DPT1RE3|VISHAY|simage
SIR124DPT1RE3|VISHAY|limage
MOSFET

SIR124DP-T1-RE3

Trans MOSFET N-CH 80V 16.1A 8-Pin PowerPAK SO EP T/R

Vishay
数据表 

产品技术规范
  • 유럽 연합 RoHS 명령어
    Compliant
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    Active
  • 미국 세관 상품 코드
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    80
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    16.1
  • Maximum Drain-Source Resistance (mOhm)
    8.4@10V
  • Typical Gate Charge @ Vgs (nC)
    19.6@7.5V|26@10V
  • Typical Gate Charge @ 10V (nC)
    26
  • Typical Input Capacitance @ Vds (pF)
    1666@40V
  • Maximum Power Dissipation (mW)
    5000
  • Typical Fall Time (ns)
    6|7
  • Typical Rise Time (ns)
    6|7
  • Typical Turn-Off Delay Time (ns)
    19|18
  • Typical Turn-On Delay Time (ns)
    12|14
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.07(Max)
  • Package Width
    5.89
  • Package Length
    4.9
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    PowerPAK SO EP
  • Pin Count
    8
订单数量

文档和资源

数据表
设计资源