产品技术规范
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
600
Maximum Gate-Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
4
Maximum Continuous Drain Current (A)
12
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
380@10V
Typical Gate Charge @ Vgs (nC)
29@10V
Typical Gate Charge @ 10V (nC)
29
Typical Input Capacitance @ Vds (pF)
937@100V
Maximum Power Dissipation (mW)
147000
Typical Fall Time (ns)
19
Typical Rise Time (ns)
19
Typical Turn-Off Delay Time (ns)
35
Typical Turn-On Delay Time (ns)
14
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Through Hole
Package Height
9.01(Max)
Package Width
4.7(Max)
Package Length
10.41(Max)
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220AB
Pin Count
3
Lead Shape
Through Hole