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MOSFETs

SIAA40DJ-T1-GE3

Trans MOSFET N-CH 40V 30A 6-Pin PowerPAK SC-70 EP T/R

Vishay
数据表 

产品技术规范
  • 欧盟RoHS指令
    Compliant
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    Active
  • 美国海关商品代码
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Dual Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    40
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Gate Threshold Voltage (V)
    2.4
  • Maximum Continuous Drain Current (A)
    30
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    12.5@10V
  • Typical Gate Charge @ Vgs (nC)
    16@10V|7.7@4.5V
  • Typical Gate Charge @ 10V (nC)
    16
  • Typical Input Capacitance @ Vds (pF)
    1200@20V
  • Maximum Power Dissipation (mW)
    3500
  • Typical Fall Time (ns)
    8|22
  • Typical Rise Time (ns)
    21|45
  • Typical Turn-Off Delay Time (ns)
    13|11
  • Typical Turn-On Delay Time (ns)
    6|13
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.75(Max)
  • Package Width
    2.05
  • Package Length
    2.05
  • PCB changed
    6
  • Supplier Package
    PowerPAK SC-70 EP
  • Pin Count
    6

文档和资源

数据表
设计资源