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SI8429DBT1E1|VISHAY|simage
SI8429DBT1E1|VISHAY|limage
MOSFET

SI8429DB-T1-E1

Trans MOSFET P-CH Si 8V 11.7A 4-Pin Micro Foot T/R

Vishay
数据表 

产品技术规范
  • 유럽 연합 RoHS 명령어
    Compliant
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    Obsolete
  • 미국 세관 상품 코드
    8541.10.00.80
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Dual Drain
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    8
  • Maximum Gate-Source Voltage (V)
    ±5
  • Maximum Gate Threshold Voltage (V)
    0.8
  • Maximum Continuous Drain Current (A)
    11.7
  • Maximum Drain-Source Resistance (mOhm)
    35@4.5V
  • Typical Gate Charge @ Vgs (nC)
    21@4.5V|24@5V
  • Typical Gate to Drain Charge (nC)
    3.7
  • Typical Gate to Source Charge (nC)
    1.8
  • Typical Reverse Recovery Charge (nC)
    150
  • Typical Input Capacitance @ Vds (pF)
    1640@4V
  • Typical Output Capacitance (pF)
    590
  • Maximum Power Dissipation (mW)
    6250
  • Typical Fall Time (ns)
    155
  • Typical Rise Time (ns)
    25
  • Typical Turn-Off Delay Time (ns)
    260
  • Typical Turn-On Delay Time (ns)
    12
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    43@1.8V|51@1.5V|65@1.2V|29@4.5V|35@2.5V
  • Mounting
    Surface Mount
  • Package Height
    0.36(Max)
  • Package Width
    1.6(Max)
  • Package Length
    1.6(Max)
  • PCB changed
    4
  • Standard Package Name
    BGA
  • Supplier Package
    Micro Foot
  • Pin Count
    4
  • Lead Shape
    Ball

文档和资源

数据表
设计资源