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SI2393DST1GE3|VISHAY|simage
SI2393DST1GE3|VISHAY|limage
MOSFETs

SI2393DS-T1-GE3

Trans MOSFET P-CH 30V 7.5A 3-Pin SOT-23 T/R

Vishay
数据表 

产品技术规范
  • 欧盟RoHS指令
    Compliant
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    Active
  • 美国海关商品代码
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    16
  • Maximum Continuous Drain Current (A)
    7.5
  • Maximum Drain-Source Resistance (mOhm)
    22.7@10V
  • Typical Gate Charge @ Vgs (nC)
    8.2@4.5V|16.8@10V
  • Typical Gate Charge @ 10V (nC)
    16.8
  • Typical Input Capacitance @ Vds (pF)
    980@15V
  • Maximum Power Dissipation (mW)
    1300
  • Typical Fall Time (ns)
    32|40
  • Typical Rise Time (ns)
    8|35
  • Typical Turn-Off Delay Time (ns)
    48|34
  • Typical Turn-On Delay Time (ns)
    30|14
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.02(Max)
  • Package Width
    1.4(Max)
  • Package Length
    3.04(Max)
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
订单数量

文档和资源

数据表
设计资源