IGBT 芯片

SGD02N120BUMA1

Trans IGBT Chip N-CH 1200V 6.2A 62W 3-Pin(2+Tab) DPAK T/R

Infineon Technologies AG

产品技术规范

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  SGD02N120BUMA1

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  No

• PPAP

  No

• Channel Type

  N

• Configuration

  Single

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Collector-Emitter Voltage (V)

  1200

• Typical Collector-Emitter Saturation Voltage (V)

  3.1

• Maximum Continuous DC Collector Current (A)

  6.2

• Maximum Gate Emitter Leakage Current (uA)

  0.1

• Maximum Power Dissipation (mW)

  62

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  2.3

• Package Width

  6.22

• Package Length

  6.5

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  DPAK

• Pin Count

  3