MOSFET

NTLJS4114NT1G

Trans MOSFET N-CH 30V 6A 6-Pin WDFN EP T/R

onsemi

产品技术规范

• 유럽 연합 RoHS 명령어

  Compliant

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active

• 미국 세관 상품 코드

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single Quad Drain

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  30

• Maximum Gate-Source Voltage (V)

  ±12

• Maximum Gate Threshold Voltage (V)

  1

• Maximum Continuous Drain Current (A)

  6

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  35@4.5V

• Typical Gate Charge @ Vgs (nC)

  8.5@4.5V

• Typical Input Capacitance @ Vds (pF)

  650@15V

• Maximum Power Dissipation (mW)

  3300

• Typical Fall Time (ns)

  4

• Typical Rise Time (ns)

  9

• Typical Turn-Off Delay Time (ns)

  20

• Typical Turn-On Delay Time (ns)

  5

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.75(Max)

• Package Width

  2

• Package Length

  2

• PCB changed

  6

• Standard Package Name

  DFN

• Supplier Package

  WDFN EP

• Pin Count

  6

• Family/Series

  NTLJS4114

• ROHS Version

  2011/65/EU, 2015/863

• Quantity Packaging

  3000

• MSL

  1