MOSFETs

NTH4L022N120M3S

Trans MOSFET N-CH SiC 1.2KV 89A 4-Pin(4+Tab) TO-247 Tube

onsemi

产品技术规范

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Yes

• PPAP

  No

• Category

  Power MOSFET

• Material

  SiC

• Configuration

  Single Dual Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  1200

• Maximum Gate-Source Voltage (V)

  22

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  89

• Maximum Drain-Source Resistance (mOhm)

  30@18V

• Typical Gate Charge @ Vgs (nC)

  137@18V

• Typical Gate Charge @ 10V (nC)

  151

• Typical Input Capacitance @ Vds (pF)

  3175@800V

• Maximum Power Dissipation (mW)

  348000

• Typical Fall Time (ns)

  13

• Typical Rise Time (ns)

  24

• Typical Turn-Off Delay Time (ns)

  48

• Typical Turn-On Delay Time (ns)

  18

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  22.54

• Package Width

  5

• Package Length

  15.6

• PCB changed

  4

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-247

• Pin Count

  4

• Family/Series

  NTH4L022N120M3S

• ROHS Version

  2011/65/EU, 2015/863

• Quantity Packaging

  450