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NJVMJD32T4G|ONSEMI|simage
NJVMJD32T4G|ONSEMI|limage
通用双极型晶体管

NJVMJD32T4G

Trans GP BJT PNP 40V 3A 1560mW 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101

onsemi
数据表 

产品技术规范
  • RoHS (Unión Europea)
    Compliant with Exemption
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Active
  • Código HTS
    8541.29.00.55
  • SVHC
    Yes
  • Índice de SEP por encima del límite autorizado
    Yes
  • Automotive
    Yes
  • PPAP
    Yes
  • Type
    PNP
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    40
  • Maximum Collector-Emitter Voltage (V)
    40
  • Maximum Base-Emitter Voltage (V)
    5
  • Operating Junction Temperature (°C)
    -65 to 150
  • Maximum Base Current (A)
    1
  • Maximum Collector-Emitter Saturation Voltage (V)
    1.2@375mA@3A
  • Maximum DC Collector Current (A)
    3
  • Minimum DC Current Gain
    25@1A@4V|10@3A@4V
  • Maximum Power Dissipation (mW)
    1560
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Supplier Temperature Grade
    Automotive
  • Mounting
    Surface Mount
  • Package Height
    2.38(Max)
  • Package Width
    6.22(Max)
  • Package Length
    6.73(Max)
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    DPAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing

文档和资源

数据表
设计资源