DRAM 芯片

MT53E512M32D1ZW-046 AIT:B

DRAM Chip Mobile LPDDR4 SDRAM 16Gbit 512Mx32 1.1V/1.8V 200-Pin TFBGA T/R/Tray Automotive AEC-Q100

Micron Technology

产品技术规范

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  4A994a.

• 环保无铅

  Active

• 美国海关商品代码

  8542.32.00.36

• Automotive

  Yes

• PPAP

  Unknown

• DRAM Type

  Mobile LPDDR4 SDRAM

• Chip Density (bit)

  16G

• Organization

  512Mx32

• Number of Internal Banks

  8

• Number of Words per Bank

  64M

• Number of Bits/Word (bit)

  32

• Data Bus Width (bit)

  32

• Maximum Clock Rate (MHz)

  4266

• Maximum Access Time (ns)

  3.5

• Address Bus Width (bit)

  19

• Process Technology

  1anm

• Interface Type

  LVSTL

• Minimum Operating Supply Voltage (V)

  1.06|1.7

• Maximum Operating Supply Voltage (V)

  1.17|1.95

• Operating Current (mA)

  400

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  95

• Supplier Temperature Grade

  Automotive

• Number of I/O Lines (bit)

  32

• Packaging

  Tape and Reel|Tray

• Mounting

  Surface Mount

• Package Height

  0.64

• Package Width

  10

• Package Length

  14.5

• PCB changed

  200

• Standard Package Name

  BGA

• Supplier Package

  TFBGA

• Pin Count

  200

• Lead Shape

  Ball