DRAM 芯片

MT53E1G32D2FW-046 WT:B

DRAM Chip Mobile LPDDR4 SDRAM 32Gbit 1Gx32 1.1V/1.8V 200-Pin TFBGA T/R/Tray

Micron Technology

产品技术规范

• RoHS (Unión Europea)

  Compliant

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  Active

• Código HTS

  8542.32.00.36

• Automotive

  Unknown

• PPAP

  Unknown

• DRAM Type

  Mobile LPDDR4 SDRAM

• Chip Density (bit)

  32G

• Organization

  1Gx32

• Number of Internal Banks

  8

• Number of Words per Bank

  128M

• Number of Bits/Word (bit)

  32

• Data Bus Width (bit)

  32

• Maximum Clock Rate (MHz)

  4266

• Maximum Access Time (ns)

  3.5

• Address Bus Width (bit)

  19

• Interface Type

  LVSTL

• Minimum Operating Supply Voltage (V)

  1.06|1.7

• Maximum Operating Supply Voltage (V)

  1.17|1.95

• Operating Current (mA)

  400

• Minimum Operating Temperature (°C)

  -25

• Maximum Operating Temperature (°C)

  85

• Number of I/O Lines (bit)

  32

• Mounting

  Surface Mount

• Package Height

  0.69

• Package Width

  10

• Package Length

  14.5

• PCB changed

  200

• Standard Package Name

  BGA

• Supplier Package

  TFBGA

• Pin Count

  200

• Lead Shape

  Ball