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JANTXV2N2219A|SEMICOA|simage
JANTXV2N2219A|SEMICOA|limage
通用双极型晶体管

JANTXV2N2219A

Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39

Semicoa Semiconductors
数据表 

产品技术规范
  • 欧盟RoHS指令
    Not Compliant
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    Active
  • 美国海关商品代码
    8541.29.00.55
  • Automotive
    Unknown
  • PPAP
    Unknown
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    75
  • Maximum Collector-Emitter Voltage (V)
    50
  • Maximum Base-Emitter Voltage (V)
    6
  • Maximum Base-Emitter Saturation Voltage (V)
    1.2@15mA@150mA|2@50mA@500mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.3@15mA@150mA|1@50mA@500mA
  • Maximum DC Collector Current (A)
    0.8
  • Minimum DC Current Gain
    30@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V
  • Maximum Power Dissipation (mW)
    800
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    200
  • Supplier Temperature Grade
    Military
  • Mounting
    Through Hole
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-39
  • Pin Count
    3
  • Lead Shape
    Through Hole

文档和资源

数据表
设计资源