通用双极型晶体管

JANSF2N3637UB

Trans GP BJT PNP 175V 1A 500mW 4-Pin Case UB

Semicoa Semiconductors

产品技术规范

• 欧盟RoHS指令

  Not Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  EA

• Automotive

  No

• PPAP

  No

• Type

  PNP

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  175

• Maximum Collector-Emitter Voltage (V)

  175

• Maximum Base-Emitter Voltage (V)

  5

• Operating Junction Temperature (°C)

  -65 to 200

• Maximum Base-Emitter Saturation Voltage (V)

  0.8@1mA@10mA|0.9@5mA@50mA

• Maximum Collector-Emitter Saturation Voltage (V)

  0.3@1mA@10mA|0.6@5m@50mA

• Maximum DC Collector Current (A)

  1

• Minimum DC Current Gain

  55@0.1mA@10V|90@1mA@10V|100@10mA@10V|100@50mA@10V|60@150mA@10V

• Maximum Power Dissipation (mW)

  500

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Supplier Temperature Grade

  Military

• Mounting

  Surface Mount

• Package Height

  1.42(Max)

• Package Width

  2.74(Max)

• Package Length

  3.25(Max)

• PCB changed

  4

• Supplier Package

  Case UB

• Pin Count

  4