通用双极型晶体管

JAN2N1893

Trans GP BJT NPN 80V 0.5A 800mW 3-Pin TO-5

Semicoa Semiconductors

产品技术规范

• 欧盟RoHS指令

  Not Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Obsolete

• 美国海关商品代码

  EA

• Automotive

  Unknown

• PPAP

  Unknown

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  120

• Maximum Collector-Emitter Voltage (V)

  80

• Maximum Base-Emitter Voltage (V)

  7

• Maximum Base-Emitter Saturation Voltage (V)

  1.3@15mA@150mA

• Maximum Collector-Emitter Saturation Voltage (V)

  5@15mA@150mA

• Maximum DC Collector Current (A)

  0.5

• Minimum DC Current Gain

  20@0.1mA@10V|35@10mA@10V|40@150mA@10V

• Maximum Power Dissipation (mW)

  800

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Supplier Temperature Grade

  Military

• Diameter

  9.4(Max)

• Mounting

  Through Hole

• Package Height

  6.6(Max)

• PCB changed

  3

• Standard Package Name

  TO

• Supplier Package

  TO-5

• Pin Count

  3