MOSFETs

IXTP10P50P

Trans MOSFET P-CH 500V 10A 3-Pin(3+Tab) TO-220AB

IXYS

产品技术规范

• RoHS (Unione Europea)

  Compliant with Exemption

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  COMPONENTS

• SVHC

  Yes

• Tasso di SVHC superiore ai limiti consentiti

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  P

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  500

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  4.5

• Operating Junction Temperature (°C)

  -55 to 150

• Maximum Continuous Drain Current (A)

  10

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  10

• Maximum Drain-Source Resistance (mOhm)

  1000@10V

• Typical Gate Charge @ Vgs (nC)

  50@10V

• Typical Gate Charge @ 10V (nC)

  50

• Typical Gate to Drain Charge (nC)

  18

• Typical Gate to Source Charge (nC)

  17

• Typical Reverse Recovery Charge (nC)

  5900

• Typical Input Capacitance @ Vds (pF)

  2840@25V

• Typical Reverse Transfer Capacitance @ Vds (pF)

  42@25V

• Minimum Gate Threshold Voltage (V)

  2

• Typical Output Capacitance (pF)

  275

• Maximum Power Dissipation (mW)

  300000

• Typical Fall Time (ns)

  44

• Typical Rise Time (ns)

  28

• Typical Turn-Off Delay Time (ns)

  52

• Typical Turn-On Delay Time (ns)

  20

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Maximum Pulsed Drain Current @ TC=25°C (A)

  30

• Typical Gate Plateau Voltage (V)

  4.7

• Typical Reverse Recovery Time (ns)

  414

• Maximum Diode Forward Voltage (V)

  3

• Maximum Positive Gate-Source Voltage (V)

  20

• Mounting

  Through Hole

• Package Height

  9.15(Max)

• Package Width

  4.83(Max)

• Package Length

  10.66(Max)

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220AB

• Pin Count

  3