DRAM 芯片

IS43TR85120BL-125KBLI

DRAM Chip DDR3L SDRAM 4Gbit 512Mx8 1.35V 78-Pin TW-BGA

Integrated Silicon Solution Inc

产品技术规范

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8542.32.00.36

• Automotive

  No

• PPAP

  No

• DRAM Type

  DDR3L SDRAM

• Chip Density (bit)

  4G

• Organization

  512Mx8

• Number of Internal Banks

  8

• Number of Words per Bank

  64M

• Number of Bits/Word (bit)

  8

• Data Bus Width (bit)

  8

• Maximum Clock Rate (MHz)

  1600

• Maximum Access Time (ns)

  0.225

• Address Bus Width (bit)

  19

• Process Technology

  25nm

• Minimum Operating Supply Voltage (V)

  1.283

• Maximum Operating Supply Voltage (V)

  1.45

• Operating Current (mA)

  167

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  95

• Supplier Temperature Grade

  Industrial

• Number of I/O Lines (bit)

  8

• Mounting

  Surface Mount

• Package Height

  1(Max)

• Package Width

  8

• Package Length

  10.5

• PCB changed

  78

• Standard Package Name

  BGA

• Supplier Package

  TW-BGA

• Pin Count

  78