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DRAM 芯片

IS43TR85120BL-125KBLI-TR

DRAM Chip DDR3L SDRAM 4Gbit 512Mx8 1.35V 78-Pin TW-BGA T/R

Integrated Silicon Solution Inc
数据表 

产品技术规范
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8542.32.00.36
  • Automotive
    No
  • PPAP
    No
  • DRAM Type
    DDR3L SDRAM
  • Chip Density (bit)
    4G
  • Organization
    512Mx8
  • Number of Internal Banks
    8
  • Number of Words per Bank
    64M
  • Number of Bits/Word (bit)
    8
  • Data Bus Width (bit)
    8
  • Maximum Clock Rate (MHz)
    1600
  • Maximum Access Time (ns)
    0.225
  • Address Bus Width (bit)
    19
  • Minimum Operating Supply Voltage (V)
    1.283
  • Maximum Operating Supply Voltage (V)
    1.45
  • Operating Current (mA)
    167
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    95
  • Supplier Temperature Grade
    Industrial
  • Number of I/O Lines (bit)
    8
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1(Max)
  • Package Width
    8
  • Package Length
    10.5
  • PCB changed
    78
  • Standard Package Name
    BGA
  • Supplier Package
    TW-BGA
  • Pin Count
    78

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数据表
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