DRAM 芯片

IS43LR16320C-6BLI-TR

DRAM Chip Mobile-DDR SDRAM 512Mbit 32Mx16 1.8V 60-Pin TFBGA T/R

Integrated Silicon Solution Inc

产品技术规范

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8542.32.00.28

• Automotive

  No

• PPAP

  No

• DRAM Type

  Mobile-DDR SDRAM

• Chip Density (bit)

  512M

• Organization

  32Mx16

• Number of Internal Banks

  4

• Number of Words per Bank

  8M

• Number of Bits/Word (bit)

  16

• Data Bus Width (bit)

  16

• Maximum Clock Rate (MHz)

  166

• Maximum Access Time (ns)

  8|5.5

• Address Bus Width (bit)

  15

• Interface Type

  LVCMOS

• Minimum Operating Supply Voltage (V)

  1.7

• Maximum Operating Supply Voltage (V)

  1.95

• Operating Current (mA)

  110

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  85

• Supplier Temperature Grade

  Industrial

• Number of I/O Lines (bit)

  16

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.7(Max)

• Package Width

  8

• Package Length

  10

• PCB changed

  60

• Standard Package Name

  BGA

• Supplier Package

  TFBGA

• Pin Count

  60

• Lead Shape

  Ball