DRAM 芯片

IS43LQ16128AL-062TBLI-TR

DRAM Chip Mobile LPDDR4X SDRAM 2Gbit 128Mx16 1.1V/1.8V 200-Pin TFBGA T/R

Integrated Silicon Solution Inc

产品技术规范

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  EA

• Automotive

  No

• PPAP

  No

• DRAM Type

  Mobile LPDDR4X SDRAM

• Chip Density (bit)

  2G

• Organization

  128Mx16

• Number of Internal Banks

  8

• Number of Words per Bank

  16M

• Number of Bits/Word (bit)

  16

• Data Bus Width (bit)

  16

• Maximum Clock Rate (MHz)

  1600

• Maximum Access Time (ns)

  3.6

• Address Bus Width (bit)

  17

• Interface Type

  LVSTL

• Minimum Operating Supply Voltage (V)

  1.06|1.7

• Maximum Operating Supply Voltage (V)

  1.17|1.95

• Operating Current (mA)

  305

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  95

• Supplier Temperature Grade

  Industrial

• Number of I/O Lines (bit)

  16

• Mounting

  Surface Mount

• Package Height

  0.8(Max)

• Package Width

  10

• Package Length

  14.5

• PCB changed

  200

• Standard Package Name

  BGA

• Supplier Package

  TFBGA

• Pin Count

  200