DRAM 芯片

IS43DR81280B-25DBLI-TR

DRAM Chip DDR2 SDRAM 1Gbit 128Mx8 1.8V 60-Pin TW-BGA T/R

Integrated Silicon Solution Inc

产品技术规范

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  NRND

• 美国海关商品代码

  8542.32.00.32

• Automotive

  No

• PPAP

  No

• DRAM Type

  DDR2 SDRAM

• Chip Density (bit)

  1G

• Organization

  128Mx8

• Number of Internal Banks

  8

• Number of Words per Bank

  16M

• Number of Bits/Word (bit)

  8

• Data Bus Width (bit)

  8

• Maximum Clock Rate (MHz)

  400

• Maximum Access Time (ns)

  0.4

• Address Bus Width (bit)

  17

• Interface Type

  SSTL_18

• Minimum Operating Supply Voltage (V)

  1.7

• Maximum Operating Supply Voltage (V)

  1.9

• Operating Current (mA)

  240

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  85

• Supplier Temperature Grade

  Industrial

• Number of I/O Lines (bit)

  8

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.8(Max)

• Package Width

  8

• Package Length

  10.5

• PCB changed

  60

• Standard Package Name

  BGA

• Supplier Package

  TW-BGA

• Pin Count

  60