DRAM 芯片

IS42SM16160K-6BLI-TR

DRAM Chip Mobile SDRAM 256Mbit 16Mx16 3.3V 54-Pin TFBGA T/R

Integrated Silicon Solution Inc

产品技术规范

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8542.32.00.24

• Automotive

  No

• PPAP

  No

• DRAM Type

  Mobile SDRAM

• Chip Density (bit)

  256M

• Organization

  16Mx16

• Number of Internal Banks

  4

• Number of Words per Bank

  4M

• Number of Bits/Word (bit)

  16

• Data Bus Width (bit)

  16

• Maximum Clock Rate (MHz)

  166

• Maximum Access Time (ns)

  8|5.5

• Address Bus Width (bit)

  15

• Interface Type

  LVCMOS

• Minimum Operating Supply Voltage (V)

  2.7

• Maximum Operating Supply Voltage (V)

  3.6

• Operating Current (mA)

  110

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  85

• Supplier Temperature Grade

  Industrial

• Number of I/O Lines (bit)

  16

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.8(Max)

• Package Width

  8

• Package Length

  8

• PCB changed

  54

• Standard Package Name

  BGA

• Supplier Package

  TFBGA

• Pin Count

  54

• Lead Shape

  Ball