The Infineon Technologies AG MOSFETs is a Fifth Generation HEXFETS from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. It has 1 number of elements per chip. The maximum Drain Source Voltage of the product is 30 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -40°C to 150°C.
Features and Benefits:
• Gull Wing style lead
• Surface Mounting
• Ultra Low On-Resistance
• Fast Switching
Application:
• Portable electronics
• PCMCIA Card
产品技术规范
RoHS (Unione Europea)
Compliant
Stato del componente
Active
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Material
Si
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
1(Min)
Maximum Continuous Drain Current (A)
1.2
Maximum Drain-Source Resistance (mOhm)
250@10V
Typical Gate Charge @ Vgs (nC)
3.3@10V
Typical Gate Charge @ 10V (nC)
3.3
Typical Gate to Drain Charge (nC)
1.1
Typical Gate to Source Charge (nC)
0.48
Typical Reverse Recovery Charge (nC)
22
Typical Input Capacitance @ Vds (pF)
85@25V
Typical Output Capacitance (pF)
34
Maximum Power Dissipation (mW)
540
Typical Fall Time (ns)
1.7
Typical Rise Time (ns)
4
Typical Turn-Off Delay Time (ns)
9
Typical Turn-On Delay Time (ns)
3.9
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
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