产品技术规范
欧盟RoHS指令
Compliant
美国出口管制分类ECCN编码
EAR99
环保无铅
Active
美国海关商品代码
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single
Process Technology
HEXFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
75
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Maximum Continuous Drain Current (A)
209
Maximum Drain-Source Resistance (mOhm)
4.5@10V
Typical Gate Charge @ Vgs (nC)
410@10V
Typical Gate Charge @ 10V (nC)
410
Typical Input Capacitance @ Vds (pF)
13000@25V
Maximum Power Dissipation (mW)
470000
Typical Fall Time (ns)
130
Typical Rise Time (ns)
190
Typical Turn-Off Delay Time (ns)
130
Typical Turn-On Delay Time (ns)
23
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tube
Mounting
Through Hole
Package Height
20.7(Max)
Package Width
5.31(Max)
Package Length
15.87(Max)
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247AC
Pin Count
3
Lead Shape
Through Hole