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IRFH3702TRPBF|INFINEON|simage
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MOSFETs

IRFH3702TRPBF

Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R

Infineon Technologies AG
数据表 

产品技术规范
  • 欧盟RoHS指令
    Compliant
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    Obsolete
  • 美国海关商品代码
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    16
  • Maximum Drain-Source Resistance (mOhm)
    7.1@10V
  • Typical Gate Charge @ Vgs (nC)
    9.6@4.5V
  • Typical Input Capacitance @ Vds (pF)
    1510@15V
  • Maximum Power Dissipation (mW)
    2800
  • Typical Fall Time (ns)
    5.8
  • Typical Rise Time (ns)
    15
  • Typical Turn-Off Delay Time (ns)
    11
  • Typical Turn-On Delay Time (ns)
    9.6
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    5.7@10V|8.7@4.5V
  • Mounting
    Surface Mount
  • Package Height
    0.95(Max)
  • Package Width
    3
  • Package Length
    3
  • PCB changed
    8
  • Standard Package Name
    QFN
  • Supplier Package
    PQFN EP
  • Pin Count
    8

文档和资源

数据表
设计资源