产品技术规范
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.10.00.80
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
500
Maximum Gate-Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
4.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
2.5
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
25
Maximum Drain-Source Resistance (mOhm)
3000@10V
Typical Gate Charge @ Vgs (nC)
17(Max)@10V
Typical Gate Charge @ 10V (nC)
17(Max)
Typical Gate to Drain Charge (nC)
8.5(Max)
Typical Gate to Source Charge (nC)
4.3(Max)
Typical Reverse Recovery Charge (nC)
760
Typical Input Capacitance @ Vds (pF)
340@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
2.7@25V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
53
Maximum Power Dissipation (mW)
50000
Typical Fall Time (ns)
13
Typical Rise Time (ns)
12
Typical Turn-Off Delay Time (ns)
16
Typical Turn-On Delay Time (ns)
8.1
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Maximum Positive Gate-Source Voltage (V)
30
Maximum Pulsed Drain Current @ TC=25°C (A)
10
Typical Reverse Recovery Time (ns)
330
Maximum Diode Forward Voltage (V)
1.6
Mounting
Through Hole
Package Height
9.01(Max)
Package Width
4.65(Max)
Package Length
10.51(Max)
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220AB
Pin Count
3
Lead Shape
Through Hole
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