产品技术规范
欧盟RoHS指令
Compliant with Exemption
美国出口管制分类ECCN编码
EAR99
环保无铅
Active
美国海关商品代码
COMPONENTS
SVHC
Yes
SVHC超标
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
400
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
5.5
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
25
Maximum Drain-Source Resistance (mOhm)
1000@10V
Typical Gate Charge @ Vgs (nC)
38(Max)@10V
Typical Gate Charge @ 10V (nC)
38(Max)
Typical Gate to Drain Charge (nC)
22(Max)
Typical Gate to Source Charge (nC)
5.7(Max)
Typical Reverse Recovery Charge (nC)
1800
Typical Input Capacitance @ Vds (pF)
700@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
64@25V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
170
Maximum Power Dissipation (mW)
74000
Typical Fall Time (ns)
14
Typical Rise Time (ns)
15
Typical Turn-Off Delay Time (ns)
38
Typical Turn-On Delay Time (ns)
10
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Maximum Pulsed Drain Current @ TC=25°C (A)
22
Typical Reverse Recovery Time (ns)
270
Maximum Diode Forward Voltage (V)
1.6
Minimum Gate Resistance (Ohm)
0.6
Maximum Gate Resistance (Ohm)
2.3
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Through Hole
Package Height
8.79(Max)
Package Width
4.65(Max)
Package Length
10.36(Max)
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220AB
Pin Count
3
Lead Shape
Through Hole