MOSFETs

IRF150

Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3

Infineon Technologies AG

产品技术规范

• 欧盟RoHS指令

  Not Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active-Unconfirmed

• 美国海关商品代码

  COMPONENTS

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  100

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Continuous Drain Current (A)

  38

• Maximum Drain-Source Resistance (mOhm)

  65@10V

• Typical Gate Charge @ Vgs (nC)

  125(Max)@10V

• Typical Gate Charge @ 10V (nC)

  125(Max)

• Typical Input Capacitance @ Vds (pF)

  3700@25V

• Maximum Power Dissipation (mW)

  150000

• Typical Fall Time (ns)

  130(Max)

• Typical Rise Time (ns)

  190(Max)

• Typical Turn-Off Delay Time (ns)

  170(Max)

• Typical Turn-On Delay Time (ns)

  35(Max)

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Mounting

  Through Hole

• Package Height

  7.74(Max)

• Package Width

  25.53(Max)

• Package Length

  39.37(Max)

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-3

• Pin Count

  3

• Lead Shape

  Through Hole