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产品技术规范
RoHS (Unione Europea)
Compliant with Exemption
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
SVHC
Yes
Tasso di SVHC superiore ai limiti consentiti
Yes
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
20
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
26
Maximum Drain-Source Resistance (mOhm)
2.05@10V
Typical Gate Charge @ Vgs (nC)
107@10V
Typical Gate Charge @ 10V (nC)
107
Typical Input Capacitance @ Vds (pF)
7300@50V
Maximum Power Dissipation (mW)
3000
Typical Fall Time (ns)
7
Typical Rise Time (ns)
6
Typical Turn-Off Delay Time (ns)
28
Typical Turn-On Delay Time (ns)
15
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
Surface Mount
Package Height
0.7(Max)
Package Width
6
Package Length
5
PCB changed
8
Supplier Package
WHSON EP
Pin Count
8
订单数量