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MOSFETs

IPT030N12N3GATMA1

Trans MOSFET N-CH 120V 24A 9-Pin(8+Tab) HSOF T/R

Infineon Technologies AG
数据表 

产品技术规范
  • 欧盟RoHS指令
    Compliant with Exemption
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    Active
  • 美国海关商品代码
    EA
  • SVHC
    Yes
  • SVHC超标
    Yes
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single Seven Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    120
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    24
  • Maximum Drain-Source Resistance (mOhm)
    3@10V
  • Typical Gate Charge @ Vgs (nC)
    158@10V
  • Typical Gate Charge @ 10V (nC)
    158
  • Typical Input Capacitance @ Vds (pF)
    10000@60V
  • Maximum Power Dissipation (mW)
    3800
  • Typical Fall Time (ns)
    22.9
  • Typical Rise Time (ns)
    19.8
  • Typical Turn-Off Delay Time (ns)
    51.8
  • Typical Turn-On Delay Time (ns)
    21.2
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.4(Max)
  • Package Width
    10.58(Max)
  • Package Length
    10.1(Max)
  • PCB changed
    8
  • Tab
    Tab
  • Standard Package Name
    SO
  • Supplier Package
    HSOF
  • Pin Count
    9
订单数量

文档和资源

数据表
设计资源