MOSFETs

IPP60R070CFD7XKSA1

Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-220 Tube

Infineon Technologies AG

产品技术规范

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single

• Process Technology

  CoolMOS CFD7

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  600

• Maximum Gate-Source Voltage (V)

  20

• Maximum Gate Threshold Voltage (V)

  4.5

• Maximum Continuous Drain Current (A)

  31

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  70@10V

• Typical Gate Charge @ Vgs (nC)

  67@10V

• Typical Gate Charge @ 10V (nC)

  67

• Typical Input Capacitance @ Vds (pF)

  2721@400V

• Maximum Power Dissipation (mW)

  156000

• Typical Fall Time (ns)

  6

• Typical Rise Time (ns)

  23

• Typical Turn-Off Delay Time (ns)

  99

• Typical Turn-On Delay Time (ns)

  26

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Typical Drain-Source Resistance @ 25°C (mOhm)

  57@10V

• Maximum Pulsed Drain Current @ TC=25°C (A)

  129

• Mounting

  Through Hole

• Package Height

  9.45(Max) mm

• Package Width

  4.57(Max) mm

• Package Length

  10.36(Max) mm

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220

• Pin Count

  3