MOSFET

IPD90N06S404ATMA2

Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101

Infineon Technologies AG

产品技术规范

• 유럽 연합 RoHS 명령어

  Compliant with Exemption

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active

• 미국 세관 상품 코드

  8541.29.00.55

• SVHC

  Yes

• SVHC 기준 초과

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  60

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  4

• Maximum Continuous Drain Current (A)

  90

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  3.8@10V

• Typical Gate Charge @ Vgs (nC)

  99@10V

• Typical Gate Charge @ 10V (nC)

  99

• Typical Input Capacitance @ Vds (pF)

  7980@25V

• Maximum Power Dissipation (mW)

  150000

• Typical Fall Time (ns)

  5

• Typical Rise Time (ns)

  70

• Typical Turn-Off Delay Time (ns)

  40

• Typical Turn-On Delay Time (ns)

  30

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  3.2@10V

• Mounting

  Surface Mount

• Package Height

  2.3

• Package Width

  6.22

• Package Length

  6.5

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  DPAK

• Pin Count

  3