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IPB107N20N3GATMA1|INFINEON|simage
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MOSFETs

IPB107N20N3GATMA1

Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R

Infineon Technologies AG
数据表 

产品技术规范
  • RoHS (Unión Europea)
    Compliant with Exemption
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Active
  • Código HTS
    COMPONENTS
  • SVHC
    Yes
  • Índice de SEP por encima del límite autorizado
    Yes
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    200
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    88
  • Maximum Drain-Source Resistance (mOhm)
    10.7@10V
  • Typical Gate Charge @ Vgs (nC)
    65@10V
  • Typical Gate Charge @ 10V (nC)
    65
  • Typical Input Capacitance @ Vds (pF)
    5340@100V
  • Maximum Power Dissipation (mW)
    300000
  • Typical Fall Time (ns)
    11
  • Typical Rise Time (ns)
    26
  • Typical Turn-Off Delay Time (ns)
    41
  • Typical Turn-On Delay Time (ns)
    18
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    9.6@10V|9.9@10V
  • Mounting
    Surface Mount
  • Package Height
    4.57(Max)
  • Package Width
    9.45(Max)
  • Package Length
    10.31(Max)
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    D2PAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing
订单数量

文档和资源

数据表
设计资源