MOSFETs

IGC025S08S1XTMA1

Trans MOSFET N-CH GaN 80V 23A 6-Pin TSON T/R

Infineon Technologies AG

产品技术规范

• RoHS (Unione Europea)

  Compliant

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Unconfirmed

• Codice HTS

  8541.29.00.55

• Category

  Power MOSFET

• Material

  GaN

• Configuration

  Single Dual Drain Triple Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  80

• Maximum Gate-Source Voltage (V)

  5.5

• Operating Junction Temperature (°C)

  -40 to 150

• Maximum Continuous Drain Current (A)

  23

• Maximum Drain-Source Resistance (mOhm)

  2.5@5V

• Typical Gate Charge @ Vgs (nC)

  12@5V

• Typical Input Capacitance @ Vds (pF)

  1250@40V

• Maximum Power Dissipation (mW)

  3300

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Mounting

  Surface Mount

• Package Height

  0.98(Max)

• Package Width

  3

• Package Length

  5

• PCB changed

  6

• Supplier Package

  TSON

• Pin Count

  6