IGBT 芯片

GT50JR21(STA1,E,S)

Trans IGBT Chip N-CH 600V 50A 230W 3-Pin(3+Tab) TO-3PN Magazine

Toshiba

产品技术规范

• RoHS (Unione Europea)

  Compliant

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  EA

• Automotive

  No

• PPAP

  No

• Channel Type

  N

• Configuration

  Single

• Maximum Gate Emitter Voltage (V)

  ±25

• Maximum Collector-Emitter Voltage (V)

  600

• Typical Collector-Emitter Saturation Voltage (V)

  1.45

• Maximum Continuous DC Collector Current (A)

  50

• Maximum Gate Emitter Leakage Current (uA)

  0.1

• Maximum Power Dissipation (mW)

  230

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Packaging

  Magazine

• Mounting

  Through Hole

• Package Height

  19

• Package Width

  4.5

• Package Length

  15.5

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-3PN

• Pin Count

  3