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FDD9510LF085|ONSEMI|limage
FDD9510LF085|ONSEMI|simage
MOSFETs

FDD9510L-F085

Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101

onsemi
数据表 

产品技术规范
  • 欧盟RoHS指令
    Compliant with Exemption
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    Obsolete
  • 美国海关商品代码
    8541.29.00.95
  • SVHC
    Yes
  • SVHC超标
    Yes
  • Automotive
    Yes
  • PPAP
    Yes
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    40
  • Maximum Gate-Source Voltage (V)
    ±16
  • Maximum Gate Threshold Voltage (V)
    3
  • Maximum Continuous Drain Current (A)
    50
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    13.5@10V
  • Typical Gate Charge @ Vgs (nC)
    13@4.5V|28@10V
  • Typical Gate Charge @ 10V (nC)
    28
  • Typical Input Capacitance @ Vds (pF)
    2020@20V
  • Maximum Power Dissipation (mW)
    75000
  • Typical Fall Time (ns)
    35
  • Typical Rise Time (ns)
    21
  • Typical Turn-Off Delay Time (ns)
    113
  • Typical Turn-On Delay Time (ns)
    8
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.29
  • Package Width
    6.1
  • Package Length
    6.54
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    DPAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing

文档和资源

数据表
设计资源