产品技术规范
欧盟RoHS指令
Compliant
美国出口管制分类ECCN编码
EAR99
环保无铅
Active
美国海关商品代码
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Dual Source
Process Technology
0.18um to 2um
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
650
Maximum Gate-Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
4.5
Maximum Continuous Drain Current (A)
75
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
23@10V
Typical Gate Charge @ Vgs (nC)
222@10V
Typical Gate Charge @ 10V (nC)
222
Typical Input Capacitance @ Vds (pF)
7160@400V
Maximum Power Dissipation (mW)
595000
Typical Fall Time (ns)
7
Typical Rise Time (ns)
30
Typical Turn-Off Delay Time (ns)
130
Typical Turn-On Delay Time (ns)
43
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tube
Mounting
Through Hole
Package Height
22.54
Package Width
5
Package Length
15.6
PCB changed
4
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
4
Lead Shape
Through Hole