通用双极型晶体管

EMZ1T2R

Trans GP BJT NPN/PNP 50V 0.15A 150mW 6-Pin EMT T/R

ROHM Semiconductor

产品技术规范

• RoHS (Unione Europea)

  Compliant

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  COMPONENTS

• Automotive

  No

• PPAP

  No

• Type

  NPN|PNP

• Category

  Bipolar Small Signal

• Material

  Si

• Configuration

  Dual

• Number of Elements per Chip

  2

• Maximum Collector-Base Voltage (V)

  60

• Maximum Collector-Emitter Voltage (V)

  50

• Maximum Base-Emitter Voltage (V)

  7@NPN|6@PNP

• Maximum Collector-Emitter Saturation Voltage (V)

  0.4@5mA@50mA@NPN|0.5@5mA@50mA@PNP

• Maximum DC Collector Current (A)

  0.15

• Maximum Collector Cut-Off Current (nA)

  100

• Minimum DC Current Gain

  120@1mA@6V

• Maximum Power Dissipation (mW)

  150

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.45(Max)

• Package Width

  1.3(Max)

• Package Length

  1.7(Max)

• PCB changed

  6

• Standard Package Name

  SOT

• Supplier Package

  EMT

• Pin Count

  6

• Lead Shape

  Flat