通用双极型晶体管

DXTN07100BP5-13

Trans GP BJT NPN 100V 2A 3200mW 3-Pin(2+Tab) PowerDI 5 T/R

Diodes Incorporated

产品技术规范

• RoHS (Unione Europea)

  Compliant

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  120

• Maximum Collector-Emitter Voltage (V)

  100

• Maximum Base-Emitter Voltage (V)

  5

• Maximum Base-Emitter Saturation Voltage (V)

  1.25@100mA@1A

• Maximum Collector-Emitter Saturation Voltage (V)

  0.3@100mA@1A, 0.5@200mA@2A

• Maximum DC Collector Current (A)

  2

• Minimum DC Current Gain

  70@50mA@2V, 100@500mA@2V, 55@1A@2V, 25@2A@2V

• Maximum Power Dissipation (mW)

  3200

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  1.1(Max)

• Package Width

  5.37

• Package Length

  3.97

• PCB changed

  2

• Tab

  Tab

• Supplier Package

  PowerDI 5

• Pin Count

  3