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CSD18510Q5B|TI|simage
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MOSFETs

CSD18510Q5B

Trans MOSFET N-CH Si 40V 100A 8-Pin VSON-CLIP EP T/R

Texas Instruments

产品技术规范
  • 欧盟RoHS指令
    Compliant with Exemption
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    Active
  • 美国海关商品代码
    8541.29.00.55
  • SVHC
    Yes
  • SVHC超标
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    40
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.3
  • Maximum Continuous Drain Current (A)
    100
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    0.96@10V
  • Typical Gate Charge @ Vgs (nC)
    58@4.5V|118@10V
  • Typical Gate Charge @ 10V (nC)
    118
  • Typical Gate to Drain Charge (nC)
    21
  • Typical Input Capacitance @ Vds (pF)
    8770@20V
  • Maximum Power Dissipation (mW)
    3100
  • Typical Fall Time (ns)
    15
  • Typical Rise Time (ns)
    17
  • Typical Turn-Off Delay Time (ns)
    44
  • Typical Turn-On Delay Time (ns)
    8
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Gate Threshold Voltage (V)
    1.7
  • Mounting
    Surface Mount
  • Package Height
    1
  • Package Width
    6
  • Package Length
    5
  • PCB changed
    8
  • Standard Package Name
    SON
  • Supplier Package
    VSON-CLIP EP
  • Pin Count
    8
  • Lead Shape
    No Lead

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