MOSFETs

CSD17581Q3A

Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R

Texas Instruments

产品技术规范

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  COMPONENTS

• SVHC

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single Quad Drain Triple Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  30

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  1.7

• Maximum Continuous Drain Current (A)

  60

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  3.8@10V

• Typical Gate Charge @ Vgs (nC)

  20@4.5V|41@10V

• Typical Gate Charge @ 10V (nC)

  41

• Typical Gate to Drain Charge (nC)

  4

• Typical Input Capacitance @ Vds (pF)

  2800@15V

• Maximum Power Dissipation (mW)

  2800

• Typical Fall Time (ns)

  10

• Typical Rise Time (ns)

  23

• Typical Turn-Off Delay Time (ns)

  23

• Typical Turn-On Delay Time (ns)

  12

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Typical Gate Threshold Voltage (V)

  1.3

• Mounting

  Surface Mount

• Package Height

  0.85(Max)

• Package Width

  3.1(Max)

• Package Length

  3.25(Max)

• PCB changed

  8

• Standard Package Name

  SON

• Supplier Package

  VSONP EP

• Pin Count

  8