MOSFETs

CAS310M17BM3

Silicon Carbide technology Power Module

WOLFSPEED, INC

产品技术规范

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  SiC

• Configuration

  Dual

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  2

• Maximum Drain-Source Voltage (V)

  1700

• Maximum Gate-Source Voltage (V)

  23

• Operating Junction Temperature (°C)

  -40 to 150

• Maximum Continuous Drain Current (A)

  409(Typ)

• Maximum Drain-Source Resistance (mOhm)

  5.8@15V

• Typical Gate Charge @ Vgs (nC)

  996@15V

• Typical Input Capacitance @ Vds (pF)

  31500@1000V

• Maximum Power Dissipation (mW)

  1630000(Typ)

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  125

• Supplier Temperature Grade

  Industrial

• Mounting

  Screw

• Package Width

  61.4

• Package Length

  106.4

• PCB changed

  7

• Pin Count

  7