产品技术规范
欧盟RoHS指令
Compliant
美国出口管制分类ECCN编码
EAR99
环保无铅
Obsolete
美国海关商品代码
8541.29.00.95
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Dual
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
25
Maximum Gate Threshold Voltage (V)
2.6(Typ)
Operating Junction Temperature (°C)
-40 to 150
Maximum Continuous Drain Current (A)
200(Typ)
Maximum Gate-Source Leakage Current (nA)
1500
Maximum IDSS (uA)
3000
Maximum Drain-Source Resistance (mOhm)
16@20V
Typical Gate Charge @ Vgs (nC)
378@20V
Typical Input Capacitance @ Vds (pF)
6470@800V
Maximum Power Dissipation (mW)
1000000(Typ)
Typical Fall Time (ns)
22
Typical Rise Time (ns)
34
Typical Turn-Off Delay Time (ns)
70
Typical Turn-On Delay Time (ns)
38
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
125
Supplier Temperature Grade
Industrial
Packaging
Box
Mounting
Screw
Package Width
61.4
Package Length
106.4
PCB changed
7
Pin Count
7
订单数量