C3M0120100J

产品技术规范

• 欧盟RoHS指令

  Compliant with Exemption

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Obsolete

• 美国海关商品代码

  8541.29.00.95

• SVHC

  Yes

• SVHC超标

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  SiC

• Configuration

  Single Hex Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  1000

• Maximum Gate-Source Voltage (V)

  19

• Maximum Gate Threshold Voltage (V)

  3.5

• Operating Junction Temperature (°C)

  -55 to 150

• Maximum Continuous Drain Current (A)

  22

• Maximum Gate-Source Leakage Current (nA)

  250

• Maximum IDSS (uA)

  100

• Maximum Drain-Source Resistance (mOhm)

  155@15V

• Typical Gate Charge @ Vgs (nC)

  18@15V

• Typical Input Capacitance @ Vds (pF)

  414@600V

• Maximum Power Dissipation (mW)

  83000

• Typical Fall Time (ns)

  6

• Typical Rise Time (ns)

  8

• Typical Turn-Off Delay Time (ns)

  14

• Typical Turn-On Delay Time (ns)

  6

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Supplier Temperature Grade

  Industrial

• Packaging

  Tube

• Mounting

  Surface Mount

• Package Height

  4.57(Max)

• Package Width

  9.13(Max)

• Package Length

  10.23(Max)

• PCB changed

  7

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  D2PAK

• Pin Count

  8