产品技术规范
RoHS (Unión Europea)
Compliant with Exemption
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Obsolete
Código HTS
8541.29.00.95
SVHC
Yes
Índice de SEP por encima del límite autorizado
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
25
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
11
Maximum Gate-Source Leakage Current (nA)
250
Maximum IDSS (uA)
100
Maximum Drain-Source Resistance (mOhm)
370@20V
Typical Gate Charge @ Vgs (nC)
19@20V
Typical Gate to Drain Charge (nC)
7
Typical Gate to Source Charge (nC)
6
Typical Reverse Recovery Charge (nC)
48
Typical Input Capacitance @ Vds (pF)
267@1000V
Typical Reverse Transfer Capacitance @ Vds (pF)
4@1000V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
31
Maximum Power Dissipation (mW)
69400
Typical Fall Time (ns)
16
Typical Rise Time (ns)
19
Typical Turn-Off Delay Time (ns)
10
Typical Turn-On Delay Time (ns)
6
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Industrial
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
320@20V
Maximum Pulsed Drain Current @ TC=25°C (A)
20
Typical Diode Forward Voltage (V)
4.3
Typical Gate Plateau Voltage (V)
8.5
Typical Reverse Recovery Time (ns)
25
Typical Gate Threshold Voltage (V)
3.1
Maximum Positive Gate-Source Voltage (V)
25
Mounting
Through Hole
Package Height
20.9
Package Width
5.02
Package Length
15.94
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
3
Lead Shape
Through Hole