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BSP171IATMA1|INFINEON|simage
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MOSFETs

BSP171IATMA1

Trans MOSFET P-CH 60V 1.9A 4-Pin(3+Tab) SOT-223

Infineon Technologies AG
数据表 

产品技术规范
  • RoHS (Unione Europea)
    Compliant with Exemption
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • SVHC
    Yes
  • Tasso di SVHC superiore ai limiti consentiti
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Small Signal
  • Configuration
    Single Dual Drain
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    20
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    1.9
  • Maximum Drain-Source Resistance (mOhm)
    250@10V
  • Typical Gate Charge @ Vgs (nC)
    6.7@4.5V|13.9@10V
  • Typical Gate Charge @ 10V (nC)
    13.9
  • Typical Input Capacitance @ Vds (pF)
    420@30V
  • Maximum Power Dissipation (mW)
    1800
  • Typical Fall Time (ns)
    11.9
  • Typical Rise Time (ns)
    2
  • Typical Turn-Off Delay Time (ns)
    24
  • Typical Turn-On Delay Time (ns)
    4
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Surface Mount
  • Package Height
    1.6
  • Package Width
    3.5
  • Package Length
    6.5
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-223
  • Pin Count
    4
订单数量

文档和资源

数据表
设计资源