射频双极型晶体管

BFU690F,115

Trans RF BJT NPN 5.5V 0.1A 490mW 4-Pin DFP T/R

NXP Semiconductors

产品技术规范

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  LTB

• 美国海关商品代码

  COMPONENTS

• SVHC

  Yes

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Material

  Si

• Configuration

  Single Dual Emitter

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  16

• Maximum Collector-Emitter Voltage (V)

  5.5

• Maximum Collector-Emitter Voltage Range (V)

  <20

• Maximum Base-Emitter Voltage (V)

  2.5

• Maximum DC Collector Current (A)

  0.1

• Maximum DC Collector Current Range (A)

  0.06 to 0.12

• Maximum Collector Cut-Off Current (nA)

  100

• Operational Bias Conditions

  4V/70mA

• Minimum DC Current Gain

  90@20mA@2V

• Minimum DC Current Gain Range

  50 to 120

• Typical Input Capacitance (pF)

  1.699

• Typical Output Capacitance (pF)

  0.404

• Maximum Power Dissipation (mW)

  490

• Maximum Power 1dB Compression (dBm)

  22(Typ)

• Typical Power Gain (dB)

  22

• Typical 3rd Order Intercept Point (dBm)

  34

• Maximum Transition Frequency (MHz)

  18000(Typ)

• Maximum Noise Figure (dB)

  0.7(Typ)

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.7

• Package Width

  1.25

• Package Length

  2

• PCB changed

  4

• Supplier Package

  DFP

• Pin Count

  4

• Lead Shape

  Flat